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02WGF68 V130LA1 A3953 AHCT1 IE02003 3AB20 2SC41 BLV33F
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 DATA SHEET
C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60C) Peak One Cycle Surge Peak Forward Gate Current Peak Reverse Gate Voltage Peak Gate Power Dissipation (tp=8.3ms) Average Gate Power Dissipation Storage Temperature Junction Temperature SYMBOL VDRM, VRRM IT(RMS) ITSM IGM VGM PGM PG(AV) Tstg TJ C103Y 30 C103YY C103A 60 100 0.8 8.0 0.5 8.0 1.0 0.01 -65 to +150 -65 to +125 C103B 200 UNITS V A A A V W W C C
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM IGT IGT IH IH VGT VGT VGT VTM dv/dt TEST CONDITIONS Rated VDRM, VRRM, RGK=1K Rated VDRM, VRRM, TC=125C, RGK=1K VD=6.0V, RL=100, RGK=1K VD=6.0V, RL=100, RGK=1K, TC=-65C RGK=1K RGK=1K, TC=-65C VD=6.0V, RL=100 VD=6.0V, RL=100, TC=-65C VD=6.0V, RL=1K, TC=125C ITM=1.0A VD=VDRM, TC=125C, RGK=1K 0.1 1.5 20 MIN TYP MAX 1.0 50 200 500 5.0 10 0.8 1.0 UNITS A A A A mA mA V V V V V/s
(SEE REVERSE SIDE) R0
C103 SERIES
SILICON CONTROLLED RECTIFIER
TO-92 PACKAGE - MECHANICAL OUTLINE
A B 123
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) 1) Anode 2) Gate 3) Cathode
C
SYMBOL A (DIA) B C D E F G H I
D E F G H
Lead Code:
I
R1


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